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FP2189 Datasheet, TriQuint Semiconductor

FP2189 hfet equivalent, 1 watt gaas hfet.

FP2189 Avg. rating / M : 1.0 rating-11

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FP2189 Datasheet

Features and benefits


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* 50
  – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compli.

Application


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* Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed .

Description

The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1.

Image gallery

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TAGS

FP2189
Watt
GaAs
HFET
TriQuint Semiconductor

Manufacturer


TriQuint Semiconductor

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